SFW9Z34TM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SFW9Z34TM  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 82 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 265 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm

Encapsulados: D2PAK

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SFW9Z34TM datasheet

 ..1. Size:286K  fairchild semi
 sfw9z34tm.pdf pdf_icon

SFW9Z34TM

SFW/I9Z34 Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = -18 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175oC Operating Temperature 2 Lower Leakage Current 10 A(Max.) @ VDS = -60V Low RDS(ON) 0.106 (Typ.) 1 1 2 3 3 1. Gate 2. Drain

 7.1. Size:509K  samsung
 sfw9z34.pdf pdf_icon

SFW9Z34TM

Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = -18 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = -60V Low RDS(ON) 0.106 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute

 9.1. Size:281K  fairchild semi
 sfi9z24 sfw9z24.pdf pdf_icon

SFW9Z34TM

SFW/I9Z24 Advanced Power MOSFET FEATURES BVDSS = -60 V n Avalanche Rugged Technology RDS(on) = 0.28 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -9.7 A n Improved Gate Charge n Extended Safe Operating Area D2-PAK I2-PAK n 175oC Operating Temperature 2 n Lower Leakage Current 10 A(Max.) @ VDS = -60V n Low RDS(ON) 0.206 (Typ.) 1 1 2 3 3 1. Gate

 9.2. Size:279K  fairchild semi
 sfi9z14 sfw9z14.pdf pdf_icon

SFW9Z34TM

SFW/I9Z14 Advanced Power MOSFET FEATURES BVDSS = -60 V n Avalanche Rugged Technology RDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -6.7 A n Improved Gate Charge n Extended Safe Operating Area D2-PAK I2-PAK n 175oC Operating Temperature 2 n Lower Leakage Current 10 A(Max.) @ VDS = -60V n Low RDS(ON) 0.362 (Typ.) 1 1 2 3 3 1. Gate

MOSTRAR MÁS

Otros transistores... SFR9024TM, SFR9034TF, SFR9110TF, SFT1452, SFT210DE, SFT6661, SFW9530TM, SFW9640TM, IRFZ44N, SQM100N04-2M7, SQM100N04-3M5, SQM100N10-10, SQM110N04-02L, SQM110N04-03, SQM110N04-03L, SQM110N04-04, SQM110N05-06L