SFW9Z34TM MOSFET. Datasheet pdf. Equivalent
Type Designator: SFW9Z34TM
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 82 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 265 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: D2PAK
SFW9Z34TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFW9Z34TM Datasheet (PDF)
sfw9z34tm.pdf
SFW/I9Z34Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -18 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175oC Operating Temperature2 Lower Leakage Current : 10 A(Max.) @ VDS = -60V Low RDS(ON) : 0.106 (Typ.)112331. Gate 2. Drain
sfw9z34.pdf
Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -18 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -60V Low RDS(ON) : 0.106 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute
sfi9z24 sfw9z24.pdf
SFW/I9Z24Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.28n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -9.7 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Low RDS(ON) : 0.206 (Typ.)112331. Gate
sfi9z14 sfw9z14.pdf
SFW/I9Z14Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.5n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -6.7 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Low RDS(ON) : 0.362 (Typ.)112331. Gate
sfw9z24.pdf
Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = -9.7 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -60V Low RDS(ON) : 0.206 (Typ.)112331. Gate 2. Drain 3. SourceAbsolut
sfw9z14.pdf
Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6.7 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -60V Low RDS(ON) : 0.362 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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