SSF3612E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF3612E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.42 nS
Cossⓘ - Capacitancia de salida: 291 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Paquete / Cubierta: SOP-8
Búsqueda de reemplazo de MOSFET SSF3612E
SSF3612E Datasheet (PDF)
ssf3612e.pdf
SSF3612E 25V N-Channel MOSFET DESCRIPTION The SSF3612E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.4V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Schem
ssf3612.pdf
SSF3612 DDESCRIPTION The SSF3612 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =11.6A RDS(ON)
ssf3616.pdf
SSF3616 DDESCRIPTION The SSF3616 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =9A RDS(ON)
ssf3617.pdf
SSF3617 DDESCRIPTION The SSF3617 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =-30V,ID =-10A RDS(ON)
ssf3610.pdf
SSF3610 DDESCRIPTION The SSF3610 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =11A RDS(ON)
ssf3615.pdf
SSF3615 DDESCRIPTION The SSF3615 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =- 30V,ID =-10A RDS(ON)
ssf3610e.pdf
SSF3610E Main Product Characteristics: VDSS 25 V SSF3610ESSF3610E RDS(on) 6.8 m(typ.) ID 18A Marking and pin Sc hemat ic d ia gr am SOP-8 A s sign ment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching an
ssf3611e.pdf
SSF3611EMain Product Characteristics: VDSS -30 V RDS(on) 10.6 m(typ.) ID -12AMarking and pin SOP-8Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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