SSF3612E - Даташиты. Аналоги. Основные параметры
Наименование производителя: SSF3612E
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 3.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 4.42 ns
Cossⓘ - Выходная емкость: 291 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
Тип корпуса: SOP-8
Аналог (замена) для SSF3612E
SSF3612E Datasheet (PDF)
ssf3612e.pdf

SSF3612E 25V N-Channel MOSFET DESCRIPTION The SSF3612E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.4V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Schem
ssf3612.pdf

SSF3612 DDESCRIPTION The SSF3612 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =11.6A RDS(ON)
ssf3616.pdf

SSF3616 DDESCRIPTION The SSF3616 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =9A RDS(ON)
ssf3617.pdf

SSF3617 DDESCRIPTION The SSF3617 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =-30V,ID =-10A RDS(ON)
Другие MOSFET... SQR50N06-07L , SSF22A5E , SSF2418B , SSF2418EBK , SSF2439E , SSF2641S , SSF2816EBK , SSF2N60D1 , IRF520 , R9523 , SSF440M , SSF450M , SSF5508D , SSF5510G , SSF6010G , SSF7008 , TJ100F04M3L .
History: UPA2757GR
History: UPA2757GR



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