SSF5510G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF5510G  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 90 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 56 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 110 nS

Cossⓘ - Capacitancia de salida: 480 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: TO-251

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SSF5510G datasheet

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 ssf5510g.pdf pdf_icon

SSF5510G

SSF5510G Preliminary FEATURES ID =56A Advanced trench process technology BV=55V Ultra low Rdson, typical 8mohm R =8mohm typ. DS (ON) High avalanche energy, 100% test Fully characterized avalanche voltage and current Lead free product DESCRIPTION The SSF5510G is a new generation of middle voltage and high current N Channel enhancement mode

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SSF5510G

SSF5508 Feathers ID =110A Advanced trench process technology BV=55V Ultra low Rdson, typical 6mohm Rdson=4.5 m (typ.) High avalanche energy, 100% test Fully characterized avalanche voltage and current Description The SSF5508 is a new generation of middle voltage and high current N Channel enhancement mode trench power SSF5508 TOP View (TO220) MOSFET. This new tec

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SSF5510G

SSF5508U Main Product Characteristics VDSS 55V RDS(on) 4.5mohm(typ.) ID 110A Marking and pin TO220 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17

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 ssf5508a.pdf pdf_icon

SSF5510G

SSF5508A Main Product Characteristics VDSS 55V RDS(on) 4.5mohm Typ ID 110A Features and Benefits SSF5508A TOP View (TO263) Advanced trench MOSFET process technology Special designed for convertors and power controls Ultra low on-resistance 175 operating temperature High Avalanche capability and 100% tested Description It utilizes the lat

MOSTRAR MÁS

Otros transistores... SSF2641S, SSF2816EBK, SSF2N60D1, SSF3612E, R9523, SSF440M, SSF450M, SSF5508D, 7N60, SSF6010G, SSF7008, TJ100F04M3L, TJ100F06M3L, TJ150F04M3L, TJ15S10M3, TJ200F04M3L, TJ9A10M3