Справочник MOSFET. SSF5510G

 

SSF5510G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSF5510G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 90 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 56 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 110 ns
   Cossⓘ - Выходная емкость: 480 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: TO-251
 

 Аналог (замена) для SSF5510G

   - подбор ⓘ MOSFET транзистора по параметрам

 

SSF5510G Datasheet (PDF)

 ..1. Size:477K  goodark
ssf5510g.pdfpdf_icon

SSF5510G

SSF5510G Preliminary FEATURES ID =56A Advanced trench process technology BV=55V Ultra low Rdson, typical 8mohm R =8mohm typ. DS (ON) High avalanche energy, 100% test Fully characterized avalanche voltage and current Lead free product DESCRIPTION The SSF5510G is a new generation of middle voltage and high current NChannel enhancement mode

 9.1. Size:307K  silikron
ssf5508.pdfpdf_icon

SSF5510G

SSF5508 Feathers: ID =110A Advanced trench process technology BV=55V Ultra low Rdson, typical 6mohm Rdson=4.5 m(typ.) High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF5508 is a new generation of middle voltage and high current NChannel enhancement mode trench power SSF5508 TOP View (TO220) MOSFET. This new tec

 9.2. Size:407K  silikron
ssf5508u.pdfpdf_icon

SSF5510G

SSF5508UMain Product Characteristics: VDSS 55V RDS(on) 4.5mohm(typ.)ID 110AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17

 9.3. Size:527K  silikron
ssf5508a.pdfpdf_icon

SSF5510G

SSF5508A Main Product Characteristics: VDSS 55V RDS(on) 4.5mohmTypID 110A Features and Benefits: SSF5508A TOP View (TO263) Advanced trench MOSFET process technology Special designed for convertors and power controls Ultra low on-resistance 175 operating temperature High Avalanche capability and 100% tested Description: It utilizes the lat

Другие MOSFET... SSF2641S , SSF2816EBK , SSF2N60D1 , SSF3612E , R9523 , SSF440M , SSF450M , SSF5508D , MMIS60R580P , SSF6010G , SSF7008 , TJ100F04M3L , TJ100F06M3L , TJ150F04M3L , TJ15S10M3 , TJ200F04M3L , TJ9A10M3 .

History: WNM2023 | NTZD3155CT1G

 

 
Back to Top

 


 
.