SSF5510G Datasheet. Specs and Replacement

Type Designator: SSF5510G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO-251

SSF5510G substitution

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SSF5510G datasheet

 ..1. Size:477K  goodark
ssf5510g.pdf pdf_icon

SSF5510G

SSF5510G Preliminary FEATURES ID =56A Advanced trench process technology BV=55V Ultra low Rdson, typical 8mohm R =8mohm typ. DS (ON) High avalanche energy, 100% test Fully characterized avalanche voltage and current Lead free product DESCRIPTION The SSF5510G is a new generation of middle voltage and high current N Channel enhancement mode ... See More ⇒

 9.1. Size:307K  silikron
ssf5508.pdf pdf_icon

SSF5510G

SSF5508 Feathers ID =110A Advanced trench process technology BV=55V Ultra low Rdson, typical 6mohm Rdson=4.5 m (typ.) High avalanche energy, 100% test Fully characterized avalanche voltage and current Description The SSF5508 is a new generation of middle voltage and high current N Channel enhancement mode trench power SSF5508 TOP View (TO220) MOSFET. This new tec... See More ⇒

 9.2. Size:407K  silikron
ssf5508u.pdf pdf_icon

SSF5510G

SSF5508U Main Product Characteristics VDSS 55V RDS(on) 4.5mohm(typ.) ID 110A Marking and pin TO220 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17... See More ⇒

 9.3. Size:527K  silikron
ssf5508a.pdf pdf_icon

SSF5510G

SSF5508A Main Product Characteristics VDSS 55V RDS(on) 4.5mohm Typ ID 110A Features and Benefits SSF5508A TOP View (TO263) Advanced trench MOSFET process technology Special designed for convertors and power controls Ultra low on-resistance 175 operating temperature High Avalanche capability and 100% tested Description It utilizes the lat... See More ⇒

Detailed specifications: SSF2641S, SSF2816EBK, SSF2N60D1, SSF3612E, R9523, SSF440M, SSF450M, SSF5508D, 7N60, SSF6010G, SSF7008, TJ100F04M3L, TJ100F06M3L, TJ150F04M3L, TJ15S10M3, TJ200F04M3L, TJ9A10M3

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