SSF5510G MOSFET. Datasheet pdf. Equivalent
Type Designator: SSF5510G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 56 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 72 nC
trⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 480 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO-251
SSF5510G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSF5510G Datasheet (PDF)
ssf5510g.pdf
SSF5510G Preliminary FEATURES ID =56A Advanced trench process technology BV=55V Ultra low Rdson, typical 8mohm R =8mohm typ. DS (ON) High avalanche energy, 100% test Fully characterized avalanche voltage and current Lead free product DESCRIPTION The SSF5510G is a new generation of middle voltage and high current NChannel enhancement mode
ssf5508.pdf
SSF5508 Feathers: ID =110A Advanced trench process technology BV=55V Ultra low Rdson, typical 6mohm Rdson=4.5 m(typ.) High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF5508 is a new generation of middle voltage and high current NChannel enhancement mode trench power SSF5508 TOP View (TO220) MOSFET. This new tec
ssf5508u.pdf
SSF5508UMain Product Characteristics: VDSS 55V RDS(on) 4.5mohm(typ.)ID 110AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17
ssf5508a.pdf
SSF5508A Main Product Characteristics: VDSS 55V RDS(on) 4.5mohmTypID 110A Features and Benefits: SSF5508A TOP View (TO263) Advanced trench MOSFET process technology Special designed for convertors and power controls Ultra low on-resistance 175 operating temperature High Avalanche capability and 100% tested Description: It utilizes the lat
ssf5506.pdf
SSF5506Main Product Characteristics: VDSS 55V RDS(on) 3.8m(typ.) ID 140AMarking and pin TO-220Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 o
ssf5508d.pdf
SSF5508D Preliminary Main Product Characteristics VDSS 60VTyp RDS(on) 3.8mohm TypID 110A Features and Benefits SSF5508D Top View (DPAK) Advanced trench MOSFET process technology Special designed for convertors and power controls Ultra low on-resistance 150 operating temperature High Avalanche capability and 100% tested Lead free
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