TK12E60W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK12E60W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 23 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO-220

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TK12E60W Datasheet (PDF)

..1. Size:251K toshiba
tk12e60w.pdf

TK12E60WMOSFETs Silicon N-Channel MOS (DTMOS)TK12E60WTK12E60WTK12E60WTK12E60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.265 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

..2. Size:246K inchange semiconductor
tk12e60w.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK12E60WITK12E60WFEATURESLow drain-source on-resistance:RDS(on) 0.3.Enhancement mode:Vth =2.7 to 3.7V (VDS = 10 V, ID=0.6mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =

7.1. Size:250K toshiba
tk12e60u.pdf

TK12E60UMOSFETs Silicon N-Channel MOS (DTMOS)TK12E60UTK12E60UTK12E60UTK12E60U1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.36 (typ.)(2) High forward transfer admittance: |Yfs| = 7.0 S (typ.)(3) Low leakage current: IDS

7.2. Size:245K inchange semiconductor
tk12e60u.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK12E60UITK12E60UFEATURESLow drain-source on-resistance:RDS(on) 0.4.Enhancement mode:Vth =3.0 to 5.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

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