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TK12E60W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK12E60W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 23 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO-220
 

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TK12E60W Datasheet (PDF)

 ..1. Size:251K  toshiba
 tk12e60w.pdf pdf_icon

TK12E60W

TK12E60WMOSFETs Silicon N-Channel MOS (DTMOS)TK12E60WTK12E60WTK12E60WTK12E60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.265 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 ..2. Size:246K  inchange semiconductor
 tk12e60w.pdf pdf_icon

TK12E60W

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK12E60WITK12E60WFEATURESLow drain-source on-resistance:RDS(on) 0.3.Enhancement mode:Vth =2.7 to 3.7V (VDS = 10 V, ID=0.6mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =

 7.1. Size:250K  toshiba
 tk12e60u.pdf pdf_icon

TK12E60W

TK12E60UMOSFETs Silicon N-Channel MOS (DTMOS)TK12E60UTK12E60UTK12E60UTK12E60U1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.36 (typ.)(2) High forward transfer admittance: |Yfs| = 7.0 S (typ.)(3) Low leakage current: IDS

 7.2. Size:245K  inchange semiconductor
 tk12e60u.pdf pdf_icon

TK12E60W

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK12E60UITK12E60UFEATURESLow drain-source on-resistance:RDS(on) 0.4.Enhancement mode:Vth =3.0 to 5.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

MOSTRAR MÁS

Otros transistores... TK10P60W , TK10Q60W , TK10V60W , TK11A65W , TK11P65W , TK11Q65W , TK11S10N1L , TK12A60W , IRF1404 , TK12J60W , TK12P60W , TK12Q60W , TK12V60W , TK14A65W , TK14A65W5 , TK14C65W , TK14C65W5 .

History: IRHM7264SE | IPS60R1K0CE | SVF4N60CAT | AUIRLS3036 | EMB12N04V | ME3443-G

 

 
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