TK12E60W Datasheet. Specs and Replacement

Type Designator: TK12E60W  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-220

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TK12E60W datasheet

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TK12E60W

TK12E60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK12E60W TK12E60W TK12E60W TK12E60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.265 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

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TK12E60W

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK12E60W ITK12E60W FEATURES Low drain-source on-resistance RDS(on) 0.3 . Enhancement mode Vth =2.7 to 3.7V (VDS = 10 V, ID=0.6mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒

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TK12E60W

TK12E60U MOSFETs Silicon N-Channel MOS (DTMOS ) TK12E60U TK12E60U TK12E60U TK12E60U 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.36 (typ.) (2) High forward transfer admittance Yfs = 7.0 S (typ.) (3) Low leakage current IDS... See More ⇒

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TK12E60W

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Detailed specifications: TK10P60W, TK10Q60W, TK10V60W, TK11A65W, TK11P65W, TK11Q65W, TK11S10N1L, TK12A60W, IRF640, TK12J60W, TK12P60W, TK12Q60W, TK12V60W, TK14A65W, TK14A65W5, TK14C65W, TK14C65W5

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