TK16E60W5 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK16E60W5  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 130 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 15.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 35 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm

Encapsulados: TO-220

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TK16E60W5 datasheet

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 tk16e60w5.pdf pdf_icon

TK16E60W5

TK16E60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK16E60W5 TK16E60W5 TK16E60W5 TK16E60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 100 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.18 (typ.) by used to Super Junction Str

 ..2. Size:246K  inchange semiconductor
 tk16e60w5.pdf pdf_icon

TK16E60W5

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK16E60W5 ITK16E60W5 FEATURES Low drain-source on-resistance RDS(on) 0.23 . Enhancement mode Vth =3.0 to 4.5V (VDS = 10 V, ID=0.79mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T

 6.1. Size:251K  toshiba
 tk16e60w.pdf pdf_icon

TK16E60W5

TK16E60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK16E60W TK16E60W TK16E60W TK16E60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.16 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

 6.2. Size:246K  inchange semiconductor
 tk16e60w.pdf pdf_icon

TK16E60W5

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK16E60W ITK16E60W FEATURES Low drain-source on-resistance RDS(on) 0.19 . Enhancement mode Vth =2.7 to 3.7V (VDS = 10 V, ID=0.79mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T

MOSTRAR MÁS

Otros transistores... TK14N65W5, TK14V65W, TK15S04N1L, TK160F10N1, TK16A60W, TK16A60W5, TK16C60W, TK16E60W, IRF9540N, TK16G60W, TK16G60W5, TK16J60W, TK16J60W5, TK16N60W, TK16N60W5, TK16V60W, TK16V60W5