TK16E60W5 PDF and Equivalents Search

 

TK16E60W5 Specs and Replacement


   Type Designator: TK16E60W5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: TO-220
 

 TK16E60W5 substitution

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TK16E60W5 datasheet

 ..1. Size:250K  toshiba
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TK16E60W5

TK16E60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK16E60W5 TK16E60W5 TK16E60W5 TK16E60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 100 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.18 (typ.) by used to Super Junction Str... See More ⇒

 ..2. Size:246K  inchange semiconductor
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TK16E60W5

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK16E60W5 ITK16E60W5 FEATURES Low drain-source on-resistance RDS(on) 0.23 . Enhancement mode Vth =3.0 to 4.5V (VDS = 10 V, ID=0.79mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

 6.1. Size:251K  toshiba
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TK16E60W5

TK16E60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK16E60W TK16E60W TK16E60W TK16E60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.16 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En... See More ⇒

 6.2. Size:246K  inchange semiconductor
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TK16E60W5

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK16E60W ITK16E60W FEATURES Low drain-source on-resistance RDS(on) 0.19 . Enhancement mode Vth =2.7 to 3.7V (VDS = 10 V, ID=0.79mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

Detailed specifications: TK14N65W5 , TK14V65W , TK15S04N1L , TK160F10N1 , TK16A60W , TK16A60W5 , TK16C60W , TK16E60W , IRF9540N , TK16G60W , TK16G60W5 , TK16J60W , TK16J60W5 , TK16N60W , TK16N60W5 , TK16V60W , TK16V60W5 .

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