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TK16J60W MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK16J60W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO-3P
 

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Principales características: TK16J60W

 ..1. Size:245K  toshiba
 tk16j60w.pdf pdf_icon

TK16J60W

TK16J60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK16J60W TK16J60W TK16J60W TK16J60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.16 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

 ..2. Size:210K  inchange semiconductor
 tk16j60w.pdf pdf_icon

TK16J60W

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK16J60W FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

 0.1. Size:243K  toshiba
 tk16j60w5.pdf pdf_icon

TK16J60W

TK16J60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK16J60W5 TK16J60W5 TK16J60W5 TK16J60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 100 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.18 (typ.) by used to Super Junction Str

 9.1. Size:189K  toshiba
 tk16j55d.pdf pdf_icon

TK16J60W

TK16J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK16J55D Switching Regulator Applications Unit mm 15.9 MAX. 3.2 0.2 Low drain-source ON-resistance RDS (ON) = 0.31 (typ.) High forward transfer admittance Yfs = 6.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vth = 2.0 to 4.0 V (VD

MOSTRAR MÁS

Otros transistores... TK160F10N1 , TK16A60W , TK16A60W5 , TK16C60W , TK16E60W , TK16E60W5 , TK16G60W , TK16G60W5 , AO3401 , TK16J60W5 , TK16N60W , TK16N60W5 , TK16V60W , TK16V60W5 , TK17A80W , TK17C65W , TK17E65W .

 

 
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