TK16J60W Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK16J60W  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 130 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 15.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 35 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: TO-3P

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TK16J60W datasheet

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TK16J60W

TK16J60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK16J60W TK16J60W TK16J60W TK16J60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.16 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

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TK16J60W

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK16J60W FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

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 tk16j60w5.pdf pdf_icon

TK16J60W

TK16J60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK16J60W5 TK16J60W5 TK16J60W5 TK16J60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 100 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.18 (typ.) by used to Super Junction Str

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 tk16j55d.pdf pdf_icon

TK16J60W

TK16J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK16J55D Switching Regulator Applications Unit mm 15.9 MAX. 3.2 0.2 Low drain-source ON-resistance RDS (ON) = 0.31 (typ.) High forward transfer admittance Yfs = 6.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vth = 2.0 to 4.0 V (VD

MOSTRAR MÁS

Otros transistores... TK160F10N1, TK16A60W, TK16A60W5, TK16C60W, TK16E60W, TK16E60W5, TK16G60W, TK16G60W5, BS170, TK16J60W5, TK16N60W, TK16N60W5, TK16V60W, TK16V60W5, TK17A80W, TK17C65W, TK17E65W