TK16J60W Datasheet. Specs and Replacement
Type Designator: TK16J60W 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 35 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO-3P
TK16J60W substitution
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TK16J60W datasheet
tk16j60w.pdf
TK16J60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK16J60W TK16J60W TK16J60W TK16J60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.16 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En... See More ⇒
tk16j60w.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK16J60W FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒
tk16j60w5.pdf
TK16J60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK16J60W5 TK16J60W5 TK16J60W5 TK16J60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 100 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.18 (typ.) by used to Super Junction Str... See More ⇒
tk16j55d.pdf
TK16J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK16J55D Switching Regulator Applications Unit mm 15.9 MAX. 3.2 0.2 Low drain-source ON-resistance RDS (ON) = 0.31 (typ.) High forward transfer admittance Yfs = 6.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vth = 2.0 to 4.0 V (VD... See More ⇒
Detailed specifications: TK160F10N1, TK16A60W, TK16A60W5, TK16C60W, TK16E60W, TK16E60W5, TK16G60W, TK16G60W5, AO3401, TK16J60W5, TK16N60W, TK16N60W5, TK16V60W, TK16V60W5, TK17A80W, TK17C65W, TK17E65W
Keywords - TK16J60W MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: HGN036N08A | SIB456DK | SIB452DK
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