TK16J60W5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK16J60W5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 130 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 15.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 35 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
Paquete / Cubierta: TO-3P
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TK16J60W5 Datasheet (PDF)
tk16j60w5.pdf

TK16J60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK16J60W5TK16J60W5TK16J60W5TK16J60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.18 (typ.) by used to Super Junction Str
tk16j60w.pdf

TK16J60WMOSFETs Silicon N-Channel MOS (DTMOS)TK16J60WTK16J60WTK16J60WTK16J60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.16 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En
tk16j60w.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK16J60WFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
tk16j55d.pdf

TK16J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK16J55D Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VD
Otros transistores... TK16A60W , TK16A60W5 , TK16C60W , TK16E60W , TK16E60W5 , TK16G60W , TK16G60W5 , TK16J60W , SPP20N60C3 , TK16N60W , TK16N60W5 , TK16V60W , TK16V60W5 , TK17A80W , TK17C65W , TK17E65W , TK17N65W .
History: P0660ATF | ATM2302BNSA | IPAW60R600P7S | BSO080P03SH
History: P0660ATF | ATM2302BNSA | IPAW60R600P7S | BSO080P03SH



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