All MOSFET. TK16J60W5 Datasheet

 

TK16J60W5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK16J60W5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 15.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 43 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: TO-3P

 TK16J60W5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK16J60W5 Datasheet (PDF)

 ..1. Size:243K  toshiba
 tk16j60w5.pdf

TK16J60W5 TK16J60W5

TK16J60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK16J60W5TK16J60W5TK16J60W5TK16J60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.18 (typ.) by used to Super Junction Str

 6.1. Size:245K  toshiba
 tk16j60w.pdf

TK16J60W5 TK16J60W5

TK16J60WMOSFETs Silicon N-Channel MOS (DTMOS)TK16J60WTK16J60WTK16J60WTK16J60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.16 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

 6.2. Size:210K  inchange semiconductor
 tk16j60w.pdf

TK16J60W5 TK16J60W5

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK16J60WFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

 9.1. Size:189K  toshiba
 tk16j55d.pdf

TK16J60W5 TK16J60W5

TK16J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK16J55D Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VD

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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