TK22A10N1 Todos los transistores

 

TK22A10N1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK22A10N1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 28 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 310 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0138 Ohm
   Paquete / Cubierta: TO-220SIS

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TK22A10N1 Datasheet (PDF)

 ..1. Size:235K  toshiba
tk22a10n1.pdf

TK22A10N1
TK22A10N1

TK22A10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK22A10N1TK22A10N1TK22A10N1TK22A10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 11.5 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3) Enh

 ..2. Size:252K  inchange semiconductor
tk22a10n1.pdf

TK22A10N1
TK22A10N1

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK22A10N1ITK22A10N1FEATURESLow drain-source on-resistance:RDS(ON) = 11.5m (typ.) (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOL

 9.1. Size:549K  toshiba
tk22a65x5.pdf

TK22A10N1
TK22A10N1

TK22A65X5MOSFET NMOS (DTMOS-H)TK22A65X5TK22A65X5TK22A65X5TK22A65X51. 1. 1. 1. 2. 2. 2. 2. (1) : RDS(ON) = 0.135 ()(2)

 9.2. Size:252K  inchange semiconductor
tk22a65x5.pdf

TK22A10N1
TK22A10N1

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK22A65X5ITK22A65X5FEATURESLow drain-source on-resistance: RDS(ON) = 0.135 (typ.)Enhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=1.1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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