TK22A10N1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK22A10N1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 22 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 310 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0138 Ohm
Encapsulados: TO-220SIS
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TK22A10N1 datasheet
tk22a10n1.pdf
TK22A10N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK22A10N1 TK22A10N1 TK22A10N1 TK22A10N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 11.5 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 100 V) (3) Enh
tk22a10n1.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK22A10N1 ITK22A10N1 FEATURES Low drain-source on-resistance RDS(ON) = 11.5m (typ.) (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOL
tk22a65x5.pdf
INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK22A65X5 ITK22A65X5 FEATURES Low drain-source on-resistance RDS(ON) = 0.135 (typ.) Enhancement mode Vth = 3 to 4.5V (VDS = 10 V, ID=1.1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(
Otros transistores... TK20E60W5 , TK20G60W , TK20J60W , TK20J60W5 , TK20N60W , TK20N60W5 , TK20V60W , TK20V60W5 , IRF1407 , TK22E10N1 , TK25A60X , TK25A60X5 , TK25E60X , TK25E60X5 , TK25N60X , TK25N60X5 , TK25S06N1L .
History: IPA100N08N3G | HM4611B
History: IPA100N08N3G | HM4611B
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