TK22A10N1 Datasheet. Specs and Replacement

Type Designator: TK22A10N1  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0138 Ohm

Package: TO-220SIS

TK22A10N1 substitution

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TK22A10N1 datasheet

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TK22A10N1

TK22A10N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK22A10N1 TK22A10N1 TK22A10N1 TK22A10N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 11.5 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 100 V) (3) Enh... See More ⇒

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TK22A10N1

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK22A10N1 ITK22A10N1 FEATURES Low drain-source on-resistance RDS(ON) = 11.5m (typ.) (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOL... See More ⇒

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TK22A10N1

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TK22A10N1

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK22A65X5 ITK22A65X5 FEATURES Low drain-source on-resistance RDS(ON) = 0.135 (typ.) Enhancement mode Vth = 3 to 4.5V (VDS = 10 V, ID=1.1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(... See More ⇒

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Detailed specifications: TK20E60W5, TK20G60W, TK20J60W, TK20J60W5, TK20N60W, TK20N60W5, TK20V60W, TK20V60W5, IRF1407, TK22E10N1, TK25A60X, TK25A60X5, TK25E60X, TK25E60X5, TK25N60X, TK25N60X5, TK25S06N1L

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