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TK31J60W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK31J60W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 30.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 32 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.088 Ohm
   Paquete / Cubierta: TO-3P

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TK31J60W Datasheet (PDF)

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TK31J60W

TK31J60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK31J60W TK31J60W TK31J60W TK31J60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.073 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

 0.1. Size:243K  toshiba
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TK31J60W

TK31J60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK31J60W5 TK31J60W5 TK31J60W5 TK31J60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 135 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.082 (typ.) by using Super Junction Stru

Otros transistores... TK28N65W5 , TK28V65W , TK2P90E , TK30A06N1 , TK30E06N1 , TK31A60W , TK31E60W , TK31E60X , IRFZ48N , TK31J60W5 , TK31N60W , TK31N60W5 , TK31N60X , TK31V60W , TK31V60W5 , TK31V60X , TK32A12N1 .

History: 2SK1014-01 | 2SK693

 

 
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