All MOSFET. TK31J60W Datasheet

 

TK31J60W Datasheet and Replacement


   Type Designator: TK31J60W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 30.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
   Package: TO-3P
 

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TK31J60W Datasheet (PDF)

 ..1. Size:251K  toshiba
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TK31J60W

TK31J60WMOSFETs Silicon N-Channel MOS (DTMOS)TK31J60WTK31J60WTK31J60WTK31J60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 0.1. Size:243K  toshiba
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TK31J60W

TK31J60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK31J60W5TK31J60W5TK31J60W5TK31J60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 135 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.082 (typ.) by using Super Junction Stru

Datasheet: TK28N65W5 , TK28V65W , TK2P90E , TK30A06N1 , TK30E06N1 , TK31A60W , TK31E60W , TK31E60X , RU7088R , TK31J60W5 , TK31N60W , TK31N60W5 , TK31N60X , TK31V60W , TK31V60W5 , TK31V60X , TK32A12N1 .

History: AONS66615 | SSF2701

Keywords - TK31J60W MOSFET datasheet

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