TK31N60W Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK31N60W 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 230 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 30.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 32 nS
Cossⓘ - Capacitancia de salida: 70 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.088 Ohm
Encapsulados: TO-247
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TK31N60W datasheet
tk31n60w.pdf
TK31N60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK31N60W TK31N60W TK31N60W TK31N60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.073 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E
tk31n60w.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK31N60W FEATURES With TO-247 packaging Easy to use High speed switching Very high commutation ruggedness 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMUM
tk31n60w5.pdf
TK31N60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK31N60W5 TK31N60W5 TK31N60W5 TK31N60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 135 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.082 (typ.) by used to Super Junction St
tk31n60x.pdf
TK31N60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK31N60X TK31N60X TK31N60X TK31N60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.073 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit
Otros transistores... TK2P90E, TK30A06N1, TK30E06N1, TK31A60W, TK31E60W, TK31E60X, TK31J60W, TK31J60W5, FTP08N06A, TK31N60W5, TK31N60X, TK31V60W, TK31V60W5, TK31V60X, TK32A12N1, TK32E12N1, TK33S10N1Z
Parámetros del MOSFET. Cómo se afectan entre sí.
History: IXFK170N20T | IRF840ALPBF | DHS020N88E | 3N80G-TMS4-R | NTP5411NG | HFS8N70U | NTP22N06
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