TK31N60W Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TK31N60W
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 230 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 30.8 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 32 ns
Cossⓘ - Выходная емкость: 70 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.088 Ohm
Тип корпуса: TO-247
- подбор MOSFET транзистора по параметрам
TK31N60W Datasheet (PDF)
tk31n60w.pdf

TK31N60WMOSFETs Silicon N-Channel MOS (DTMOS)TK31N60WTK31N60WTK31N60WTK31N60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk31n60w.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK31N60WFEATURESWith TO-247 packagingEasy to useHigh speed switchingVery high commutation ruggedness100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM
tk31n60w5.pdf

TK31N60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK31N60W5TK31N60W5TK31N60W5TK31N60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 135 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.082 (typ.) by used to Super Junction St
tk31n60x.pdf

TK31N60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK31N60XTK31N60XTK31N60XTK31N60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: FDS6673BZF085 | SIHG47N60S | FMC05N60E | 9N95 | NTMFS5C604NL | CEB02N65D | IRF821
History: FDS6673BZF085 | SIHG47N60S | FMC05N60E | 9N95 | NTMFS5C604NL | CEB02N65D | IRF821



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