TK31N60W Specs and Replacement
Type Designator: TK31N60W
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
Package: TO-247
TK31N60W substitution
- MOSFET ⓘ Cross-Reference Search
TK31N60W datasheet
tk31n60w.pdf
TK31N60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK31N60W TK31N60W TK31N60W TK31N60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.073 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒
tk31n60w.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK31N60W FEATURES With TO-247 packaging Easy to use High speed switching Very high commutation ruggedness 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMUM ... See More ⇒
tk31n60w5.pdf
TK31N60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK31N60W5 TK31N60W5 TK31N60W5 TK31N60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 135 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.082 (typ.) by used to Super Junction St... See More ⇒
tk31n60x.pdf
TK31N60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK31N60X TK31N60X TK31N60X TK31N60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.073 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit... See More ⇒
Detailed specifications: TK2P90E, TK30A06N1, TK30E06N1, TK31A60W, TK31E60W, TK31E60X, TK31J60W, TK31J60W5, IRF830, TK31N60W5, TK31N60X, TK31V60W, TK31V60W5, TK31V60X, TK32A12N1, TK32E12N1, TK33S10N1Z
Keywords - TK31N60W MOSFET specs
TK31N60W cross reference
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TK31N60W replacement
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