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TK31V60W5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK31V60W5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 240 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 30.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.109 Ohm
   Paquete / Cubierta: DFN8X8
     - Selección de transistores por parámetros

 

TK31V60W5 Datasheet (PDF)

 ..1. Size:274K  toshiba
 tk31v60w5.pdf pdf_icon

TK31V60W5

TK31V60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK31V60W5TK31V60W5TK31V60W5TK31V60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 135 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.087 (typ.)(3) Easy to control Gate switc

 6.1. Size:241K  toshiba
 tk31v60w.pdf pdf_icon

TK31V60W5

TK31V60WMOSFETs Silicon N-Channel MOS (DTMOS)TK31V60WTK31V60WTK31V60WTK31V60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.078 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 7.1. Size:241K  toshiba
 tk31v60x.pdf pdf_icon

TK31V60W5

TK31V60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK31V60XTK31V60XTK31V60XTK31V60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.078 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit

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History: SGP100N025 | BSR202N | FHU50N06D

 

 
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