TK31V60W5 MOSFET. Datasheet pdf. Equivalent
Type Designator: TK31V60W5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 240 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 30.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 105 nC
trⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 70 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.109 Ohm
Package: DFN8X8
TK31V60W5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK31V60W5 Datasheet (PDF)
tk31v60w5.pdf
TK31V60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK31V60W5TK31V60W5TK31V60W5TK31V60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 135 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.087 (typ.)(3) Easy to control Gate switc
tk31v60w.pdf
TK31V60WMOSFETs Silicon N-Channel MOS (DTMOS)TK31V60WTK31V60WTK31V60WTK31V60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.078 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk31v60x.pdf
TK31V60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK31V60XTK31V60XTK31V60XTK31V60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.078 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
