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TK32A12N1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK32A12N1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 32 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 330 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0138 Ohm
   Paquete / Cubierta: TO-220SIS

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TK32A12N1 Datasheet (PDF)

 ..1. Size:240K  toshiba
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TK32A12N1

TK32A12N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK32A12N1 TK32A12N1 TK32A12N1 TK32A12N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 11.0 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 120 V) (3) Enh

 ..2. Size:252K  inchange semiconductor
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TK32A12N1

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK32A12N1 ITK32A12N1 FEATURES Low drain-source on-resistance RDS(ON) = 11.0 m (typ.) (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSO

Otros transistores... TK31J60W , TK31J60W5 , TK31N60W , TK31N60W5 , TK31N60X , TK31V60W , TK31V60W5 , TK31V60X , EMB04N03H , TK32E12N1 , TK33S10N1Z , TK34A10N1 , TK34E10N1 , TK35A08N1 , TK35A65W , TK35A65W5 , TK35E08N1 .

History: CTP2303

 

 
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