TK32A12N1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK32A12N1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 32 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 330 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0138 Ohm
Paquete / Cubierta: TO-220SIS
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TK32A12N1 Datasheet (PDF)
tk32a12n1.pdf

TK32A12N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK32A12N1TK32A12N1TK32A12N1TK32A12N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 11.0 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 120 V)(3) Enh
tk32a12n1.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK32A12N1ITK32A12N1FEATURESLow drain-source on-resistance:RDS(ON) = 11.0 m (typ.) (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSO
Otros transistores... TK31J60W , TK31J60W5 , TK31N60W , TK31N60W5 , TK31N60X , TK31V60W , TK31V60W5 , TK31V60X , 2SK3918 , TK32E12N1 , TK33S10N1Z , TK34A10N1 , TK34E10N1 , TK35A08N1 , TK35A65W , TK35A65W5 , TK35E08N1 .
History: BL80N20-W | AOTF280A60L | NCEA60ND18G | TPW65R075DFD | SWN2N70D | AON7788 | AOW10N65
History: BL80N20-W | AOTF280A60L | NCEA60ND18G | TPW65R075DFD | SWN2N70D | AON7788 | AOW10N65



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