All MOSFET. TK32A12N1 Datasheet

 

TK32A12N1 Datasheet and Replacement


   Type Designator: TK32A12N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 34 nC
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0138 Ohm
   Package: TO-220SIS
 

 TK32A12N1 substitution

   - MOSFET ⓘ Cross-Reference Search

 

TK32A12N1 Datasheet (PDF)

 ..1. Size:240K  toshiba
 tk32a12n1.pdf pdf_icon

TK32A12N1

TK32A12N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK32A12N1TK32A12N1TK32A12N1TK32A12N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 11.0 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 120 V)(3) Enh

 ..2. Size:252K  inchange semiconductor
 tk32a12n1.pdf pdf_icon

TK32A12N1

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK32A12N1ITK32A12N1FEATURESLow drain-source on-resistance:RDS(ON) = 11.0 m (typ.) (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSO

Datasheet: TK31J60W , TK31J60W5 , TK31N60W , TK31N60W5 , TK31N60X , TK31V60W , TK31V60W5 , TK31V60X , 2SK3918 , TK32E12N1 , TK33S10N1Z , TK34A10N1 , TK34E10N1 , TK35A08N1 , TK35A65W , TK35A65W5 , TK35E08N1 .

Keywords - TK32A12N1 MOSFET datasheet

 TK32A12N1 cross reference
 TK32A12N1 equivalent finder
 TK32A12N1 lookup
 TK32A12N1 substitution
 TK32A12N1 replacement

 

 
Back to Top

 


 
.