IRFU210A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFU210A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 26 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 35 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
Paquete / Cubierta: TO251
Búsqueda de reemplazo de IRFU210A MOSFET
IRFU210A Datasheet (PDF)
irfr210pbf irfu210pbf.pdf

PD - 95068AIRFR210PbFIRFU210PbF Lead-Free12/9/04Document Number: 91268 www.vishay.com1IRFR/U210PbFDocument Number: 91268 www.vishay.com2IRFR/U210PbFDocument Number: 91268 www.vishay.com3IRFR/U210PbFDocument Number: 91268 www.vishay.com4IRFR/U210PbFDocument Number: 91268 www.vishay.com5IRFR/U210PbFDocument Number: 91268 www.vishay.com6IRFR/U21
irfr210b irfu210b 2.pdf

November 2001IRFR210B / IRFU210B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored t
irfr210b irfu210b.pdf

November 2001IRFR210B / IRFU210B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored t
irfr210pbf irfu210pbf sihfr210 sihfu210.pdf

IRFR210, IRFU210, SiHFR210, SiHFU210www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5 Surface Mount (IRFR210, SiHFR210)Qg (Max.) (nC) 8.2 Straight Lead (IRFU210, SiHFU210) Available in Tape and ReelQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Eas
Otros transistores... IRFU111 , IRFU120 , IRFU1205 , IRFU120A , IRFU120N , IRFU121 , IRFU130A , IRFU210 , IRF830 , IRFU212 , IRFU214 , IRFU214A , IRFU220 , IRFU220A , IRFU222 , IRFU224 , IRFU224A .
History: 2SK2018-01S | PSMN013-80YS | SSS2N60
History: 2SK2018-01S | PSMN013-80YS | SSS2N60



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMTQ90N02A | JMTQ60N04B | JMTQ440P04A | JMTQ4407A | JMTQ380C03D | JMTQ3400D | JMTQ320N10A | JMTQ3010D | JMTQ3008A | JMTQ3006C | JMTQ3006B | JMTQ3005C | JMTQ3005A | JMTQ3003A | JMTQ250C03D | JMTLA3134K
Popular searches
ksc2383 datasheet | 2n3906 equivalent | a733 transistor equivalent | 2n5401 transistor datasheet | 2n2222 data sheet | irf3205 datasheet | oc71 | njw0302g