All MOSFET. IRFU210A Datasheet

 

IRFU210A Datasheet and Replacement


   Type Designator: IRFU210A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO251
 

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IRFU210A Datasheet (PDF)

 7.1. Size:1298K  international rectifier
 irfr210pbf irfu210pbf.pdf pdf_icon

IRFU210A

PD - 95068AIRFR210PbFIRFU210PbF Lead-Free12/9/04Document Number: 91268 www.vishay.com1IRFR/U210PbFDocument Number: 91268 www.vishay.com2IRFR/U210PbFDocument Number: 91268 www.vishay.com3IRFR/U210PbFDocument Number: 91268 www.vishay.com4IRFR/U210PbFDocument Number: 91268 www.vishay.com5IRFR/U210PbFDocument Number: 91268 www.vishay.com6IRFR/U21

 7.2. Size:655K  fairchild semi
 irfr210b irfu210b 2.pdf pdf_icon

IRFU210A

November 2001IRFR210B / IRFU210B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored t

 7.3. Size:724K  fairchild semi
 irfr210b irfu210b.pdf pdf_icon

IRFU210A

November 2001IRFR210B / IRFU210B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored t

 7.4. Size:821K  vishay
 irfr210pbf irfu210pbf sihfr210 sihfu210.pdf pdf_icon

IRFU210A

IRFR210, IRFU210, SiHFR210, SiHFU210www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5 Surface Mount (IRFR210, SiHFR210)Qg (Max.) (nC) 8.2 Straight Lead (IRFU210, SiHFU210) Available in Tape and ReelQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Eas

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Datasheet: IRFU111 , IRFU120 , IRFU1205 , IRFU120A , IRFU120N , IRFU121 , IRFU130A , IRFU210 , IRF830 , IRFU212 , IRFU214 , IRFU214A , IRFU220 , IRFU220A , IRFU222 , IRFU224 , IRFU224A .

Keywords - IRFU210A MOSFET datasheet

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