TK62N60W5 Todos los transistores

 

TK62N60W5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK62N60W5

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 400 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 61.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 190 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm

Encapsulados: TO-247

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TK62N60W5 datasheet

 ..1. Size:244K  toshiba
 tk62n60w5.pdf pdf_icon

TK62N60W5

TK62N60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK62N60W5 TK62N60W5 TK62N60W5 TK62N60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 170 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.036 (typ.) by used to Super Junction St

 6.1. Size:245K  toshiba
 tk62n60w.pdf pdf_icon

TK62N60W5

TK62N60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK62N60W TK62N60W TK62N60W TK62N60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.033 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

 7.1. Size:245K  toshiba
 tk62n60x.pdf pdf_icon

TK62N60W5

TK62N60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK62N60X TK62N60X TK62N60X TK62N60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.033 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit

 9.1. Size:583K  ixys
 ixtk62n25.pdf pdf_icon

TK62N60W5

IXTK 62N25 VDSS = 250 V High Current ID25 = 62 A MegaMOSTMFET RDS(on) = 35 m N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings TO-264 VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1.0 M 250 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) G ID25 TC = 25 C62 A D IDM TC = 25 C, pulse width

MOSTRAR MÁS

Otros transistores... TK5P60W5 , TK5P65W , TK5Q60W , TK5Q65W , TK60F08K3 , TK62J60W , TK62J60W5 , TK62N60W , SPP20N60C3 , TK62N60X , TK65G10N1 , TK65S04N1L , TK6A60W , TK6A65W , TK6A80E , TK6P60W , TK6P65W .

History: TK62N60X | STM8362 | ELM32414LA | R6007KNX

 

 

 

 

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