All MOSFET. TK62N60W5 Datasheet

 

TK62N60W5 Datasheet and Replacement


   Type Designator: TK62N60W5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 61.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO-247
 

 TK62N60W5 substitution

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TK62N60W5 Datasheet (PDF)

 ..1. Size:244K  toshiba
 tk62n60w5.pdf pdf_icon

TK62N60W5

TK62N60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK62N60W5TK62N60W5TK62N60W5TK62N60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 170 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.036 (typ.) by used to Super Junction St

 6.1. Size:245K  toshiba
 tk62n60w.pdf pdf_icon

TK62N60W5

TK62N60WMOSFETs Silicon N-Channel MOS (DTMOS)TK62N60WTK62N60WTK62N60WTK62N60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.033 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 7.1. Size:245K  toshiba
 tk62n60x.pdf pdf_icon

TK62N60W5

TK62N60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK62N60XTK62N60XTK62N60XTK62N60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.033 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit

 9.1. Size:583K  ixys
 ixtk62n25.pdf pdf_icon

TK62N60W5

IXTK 62N25 VDSS = 250 VHigh CurrentID25 = 62 AMegaMOSTMFETRDS(on) = 35 mN-Channel Enhancement ModePreliminary Data SheetSymbol Test conditions Maximum ratingsTO-264VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1.0 M 250 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)GID25 TC = 25C62 ADIDM TC = 25C, pulse width

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Datasheet: TK5P60W5 , TK5P65W , TK5Q60W , TK5Q65W , TK60F08K3 , TK62J60W , TK62J60W5 , TK62N60W , SPP20N60C3 , TK62N60X , TK65G10N1 , TK65S04N1L , TK6A60W , TK6A65W , TK6A80E , TK6P60W , TK6P65W .

History: LNH06R062 | 4N60KL-TF3T-T

Keywords - TK62N60W5 MOSFET datasheet

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 TK62N60W5 equivalent finder
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