TK62N60W5 Datasheet and Replacement. Cross Reference Search

TK62N60W5 Datasheet (PDF)

..1. Size:244K toshiba
tk62n60w5.pdf pdf_icon

TK62N60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK62N60W5TK62N60W5TK62N60W5TK62N60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 170 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.036 (typ.) by used to Super Junction St

6.1. Size:245K toshiba
tk62n60w.pdf pdf_icon

TK62N60WMOSFETs Silicon N-Channel MOS (DTMOS)TK62N60WTK62N60WTK62N60WTK62N60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.033 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

7.1. Size:245K toshiba
tk62n60x.pdf pdf_icon

TK62N60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK62N60XTK62N60XTK62N60XTK62N60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.033 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit

9.1. Size:583K ixys
ixtk62n25.pdf pdf_icon

IXTK 62N25 VDSS = 250 VHigh CurrentID25 = 62 AMegaMOSTMFETRDS(on) = 35 mN-Channel Enhancement ModePreliminary Data SheetSymbol Test conditions Maximum ratingsTO-264VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1.0 M 250 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)GID25 TC = 25C62 ADIDM TC = 25C, pulse width

Datasheet: TK5P60W5 , TK5P65W , TK5Q60W , TK5Q65W , TK60F08K3 , TK62J60W , TK62J60W5 , TK62N60W , AON7410 , TK62N60X , TK65G10N1 , TK65S04N1L , TK6A60W , TK6A65W , TK6A80E , TK6P60W , TK6P65W .