TK6Q60W Todos los transistores

 

TK6Q60W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK6Q60W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 12 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.82 Ohm
   Paquete / Cubierta: IPAK
     - Selección de transistores por parámetros

 

TK6Q60W Datasheet (PDF)

 ..1. Size:241K  toshiba
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TK6Q60W

TK6Q60WMOSFETs Silicon N-Channel MOS (DTMOS)TK6Q60WTK6Q60WTK6Q60WTK6Q60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.68 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance

 ..2. Size:234K  inchange semiconductor
tk6q60w.pdf pdf_icon

TK6Q60W

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK6Q60WITK6Q60WFEATURESLow drain-source on-resistance:RDS(on) 820m.Enhancement mode:Vth =2.7 to 3.7V (VDS = 10 V, ID=0.31mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:382K  toshiba
tk6q65w.pdf pdf_icon

TK6Q60W

TK6Q65WMOSFETs Silicon N-Channel MOS (DTMOS)TK6Q65WTK6Q65WTK6Q65WTK6Q65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.89 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement

 9.2. Size:233K  inchange semiconductor
tk6q65w.pdf pdf_icon

TK6Q60W

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK6Q65WITK6Q65WFEATURESLow drain-source on-resistance:RDS(on) 1.05.Enhancement mode:Vth =2.5 to 3.5V (VDS = 10 V, ID=0.18mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCE65N900I | 2SK3034 | CSD18536KCS | HAT2171H | IXFZ520N075T2 | WML15N65C2 | 2SJ600

 

 
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