All MOSFET. TK6Q60W Datasheet

 

TK6Q60W MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK6Q60W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
   |Id|ⓘ - Maximum Drain Current: 6.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.82 Ohm
   Package: IPAK

 TK6Q60W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK6Q60W Datasheet (PDF)

 ..1. Size:241K  toshiba
 tk6q60w.pdf

TK6Q60W TK6Q60W

TK6Q60WMOSFETs Silicon N-Channel MOS (DTMOS)TK6Q60WTK6Q60WTK6Q60WTK6Q60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.68 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance

 ..2. Size:234K  inchange semiconductor
 tk6q60w.pdf

TK6Q60W TK6Q60W

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK6Q60WITK6Q60WFEATURESLow drain-source on-resistance:RDS(on) 820m.Enhancement mode:Vth =2.7 to 3.7V (VDS = 10 V, ID=0.31mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:382K  toshiba
 tk6q65w.pdf

TK6Q60W TK6Q60W

TK6Q65WMOSFETs Silicon N-Channel MOS (DTMOS)TK6Q65WTK6Q65WTK6Q65WTK6Q65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.89 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement

 9.2. Size:233K  inchange semiconductor
 tk6q65w.pdf

TK6Q60W TK6Q60W

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK6Q65WITK6Q65WFEATURESLow drain-source on-resistance:RDS(on) 1.05.Enhancement mode:Vth =2.5 to 3.5V (VDS = 10 V, ID=0.18mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: HRS88N08K

 

 
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