TK6Q60W PDF and Equivalents Search

 

TK6Q60W Specs and Replacement

Type Designator: TK6Q60W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.82 Ohm

Package: IPAK

TK6Q60W substitution

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TK6Q60W datasheet

 ..1. Size:241K  toshiba
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TK6Q60W

TK6Q60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK6Q60W TK6Q60W TK6Q60W TK6Q60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.68 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance... See More ⇒

 ..2. Size:234K  inchange semiconductor
tk6q60w.pdf pdf_icon

TK6Q60W

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK6Q60W ITK6Q60W FEATURES Low drain-source on-resistance RDS(on) 820m . Enhancement mode Vth =2.7 to 3.7V (VDS = 10 V, ID=0.31mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

 9.1. Size:382K  toshiba
tk6q65w.pdf pdf_icon

TK6Q60W

TK6Q65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK6Q65W TK6Q65W TK6Q65W TK6Q65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.89 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement... See More ⇒

 9.2. Size:233K  inchange semiconductor
tk6q65w.pdf pdf_icon

TK6Q60W

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK6Q65W ITK6Q65W FEATURES Low drain-source on-resistance RDS(on) 1.05 . Enhancement mode Vth =2.5 to 3.5V (VDS = 10 V, ID=0.18mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

Detailed specifications: TK62N60X, TK65G10N1, TK65S04N1L, TK6A60W, TK6A65W, TK6A80E, TK6P60W, TK6P65W, AON6380, TK6Q65W, TK70J04K3Z, TK72A08N1, TK72A12N1, TK72E08N1, TK72E12N1, TK7A60W, TK7A60W5

Keywords - TK6Q60W MOSFET specs

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