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TK6Q65W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK6Q65W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 12 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.05 Ohm
   Paquete / Cubierta: IPAK
 

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TK6Q65W Datasheet (PDF)

 ..1. Size:382K  toshiba
 tk6q65w.pdf pdf_icon

TK6Q65W

TK6Q65WMOSFETs Silicon N-Channel MOS (DTMOS)TK6Q65WTK6Q65WTK6Q65WTK6Q65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.89 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement

 ..2. Size:233K  inchange semiconductor
 tk6q65w.pdf pdf_icon

TK6Q65W

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK6Q65WITK6Q65WFEATURESLow drain-source on-resistance:RDS(on) 1.05.Enhancement mode:Vth =2.5 to 3.5V (VDS = 10 V, ID=0.18mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:241K  toshiba
 tk6q60w.pdf pdf_icon

TK6Q65W

TK6Q60WMOSFETs Silicon N-Channel MOS (DTMOS)TK6Q60WTK6Q60WTK6Q60WTK6Q60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.68 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance

 9.2. Size:234K  inchange semiconductor
 tk6q60w.pdf pdf_icon

TK6Q65W

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK6Q60WITK6Q60WFEATURESLow drain-source on-resistance:RDS(on) 820m.Enhancement mode:Vth =2.7 to 3.7V (VDS = 10 V, ID=0.31mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

MOSTRAR MÁS

Otros transistores... TK65G10N1 , TK65S04N1L , TK6A60W , TK6A65W , TK6A80E , TK6P60W , TK6P65W , TK6Q60W , AO4407 , TK70J04K3Z , TK72A08N1 , TK72A12N1 , TK72E08N1 , TK72E12N1 , TK7A60W , TK7A60W5 , TK7A65W .

History: SI2324DS | IRLR7821C | NTMS4807NR2G | SQ4005EY

 

 
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