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TK6Q65W MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK6Q65W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 11 nC
   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 12 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.05 Ohm
   Paquete / Cubierta: IPAK
 

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TK6Q65W datasheet

 ..1. Size:382K  toshiba
 tk6q65w.pdf pdf_icon

TK6Q65W

TK6Q65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK6Q65W TK6Q65W TK6Q65W TK6Q65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.89 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement

 ..2. Size:233K  inchange semiconductor
 tk6q65w.pdf pdf_icon

TK6Q65W

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK6Q65W ITK6Q65W FEATURES Low drain-source on-resistance RDS(on) 1.05 . Enhancement mode Vth =2.5 to 3.5V (VDS = 10 V, ID=0.18mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:241K  toshiba
 tk6q60w.pdf pdf_icon

TK6Q65W

TK6Q60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK6Q60W TK6Q60W TK6Q60W TK6Q60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.68 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance

 9.2. Size:234K  inchange semiconductor
 tk6q60w.pdf pdf_icon

TK6Q65W

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK6Q60W ITK6Q60W FEATURES Low drain-source on-resistance RDS(on) 820m . Enhancement mode Vth =2.7 to 3.7V (VDS = 10 V, ID=0.31mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25

MOSTRAR MÁS

Otros transistores... TK65G10N1 , TK65S04N1L , TK6A60W , TK6A65W , TK6A80E , TK6P60W , TK6P65W , TK6Q60W , IRF530 , TK70J04K3Z , TK72A08N1 , TK72A12N1 , TK72E08N1 , TK72E12N1 , TK7A60W , TK7A60W5 , TK7A65W .

 

 
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