TK6Q65W MOSFET Datasheet: N-Ch, 650V, 5.8A. Full specification with pinout and replacement list

TK6Q65W Specs and Replacement

Type Designator: TK6Q65W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm

Package: IPAK

TK6Q65W substitution

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TK6Q65W datasheet

..1. Size:382K toshiba
tk6q65w.pdf pdf_icon

TK6Q65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK6Q65W TK6Q65W TK6Q65W TK6Q65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.89 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement... See More ⇒

..2. Size:233K inchange semiconductor
tk6q65w.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK6Q65W ITK6Q65W FEATURES Low drain-source on-resistance RDS(on) 1.05 . Enhancement mode Vth =2.5 to 3.5V (VDS = 10 V, ID=0.18mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

9.1. Size:241K toshiba
tk6q60w.pdf pdf_icon

TK6Q60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK6Q60W TK6Q60W TK6Q60W TK6Q60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.68 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance... See More ⇒

9.2. Size:234K inchange semiconductor
tk6q60w.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK6Q60W ITK6Q60W FEATURES Low drain-source on-resistance RDS(on) 820m . Enhancement mode Vth =2.7 to 3.7V (VDS = 10 V, ID=0.31mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

Detailed specifications: TK65G10N1, TK65S04N1L, TK6A60W, TK6A65W, TK6A80E, TK6P60W, TK6P65W, TK6Q60W, IRF530, TK70J04K3Z, TK72A08N1, TK72A12N1, TK72E08N1, TK72E12N1, TK7A60W, TK7A60W5, TK7A65W