TK6Q65W - аналоги и даташиты транзистора

 

TK6Q65W - Даташиты. Аналоги. Основные параметры


   Наименование производителя: TK6Q65W
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 12 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.05 Ohm
   Тип корпуса: IPAK

 Аналог (замена) для TK6Q65W

 

TK6Q65W Datasheet (PDF)

 ..1. Size:382K  toshiba
tk6q65w.pdfpdf_icon

TK6Q65W

TK6Q65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK6Q65W TK6Q65W TK6Q65W TK6Q65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.89 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement

 ..2. Size:233K  inchange semiconductor
tk6q65w.pdfpdf_icon

TK6Q65W

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK6Q65W ITK6Q65W FEATURES Low drain-source on-resistance RDS(on) 1.05 . Enhancement mode Vth =2.5 to 3.5V (VDS = 10 V, ID=0.18mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:241K  toshiba
tk6q60w.pdfpdf_icon

TK6Q65W

TK6Q60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK6Q60W TK6Q60W TK6Q60W TK6Q60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.68 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance

 9.2. Size:234K  inchange semiconductor
tk6q60w.pdfpdf_icon

TK6Q65W

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK6Q60W ITK6Q60W FEATURES Low drain-source on-resistance RDS(on) 820m . Enhancement mode Vth =2.7 to 3.7V (VDS = 10 V, ID=0.31mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25

Другие MOSFET... TK65G10N1 , TK65S04N1L , TK6A60W , TK6A65W , TK6A80E , TK6P60W , TK6P65W , TK6Q60W , IRF530 , TK70J04K3Z , TK72A08N1 , TK72A12N1 , TK72E08N1 , TK72E12N1 , TK7A60W , TK7A60W5 , TK7A65W .

History: TK72A12N1 | BUK637-400B

 

 
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