TK72A12N1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK72A12N1  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 72 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 33 nS

Cossⓘ - Capacitancia de salida: 1200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: TO-220SIS

  📄📄 Copiar 

 Búsqueda de reemplazo de TK72A12N1 MOSFET

- Selecciónⓘ de transistores por parámetros

 

TK72A12N1 datasheet

 ..1. Size:233K  toshiba
 tk72a12n1.pdf pdf_icon

TK72A12N1

TK72A12N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK72A12N1 TK72A12N1 TK72A12N1 TK72A12N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 3.7 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 120 V) (3) Enha

 ..2. Size:251K  inchange semiconductor
 tk72a12n1.pdf pdf_icon

TK72A12N1

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK72A12N1 ITK72A12N1 FEATURES Low drain-source on-resistance RDS(ON) = 4.5m (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXI

 9.1. Size:234K  toshiba
 tk72a08n1.pdf pdf_icon

TK72A12N1

TK72A08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK72A08N1 TK72A08N1 TK72A08N1 TK72A08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 3.7 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3) Enhan

 9.2. Size:253K  inchange semiconductor
 tk72a08n1.pdf pdf_icon

TK72A12N1

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK72A08N1 ITK72A08N1 FEATURES Low drain-source on-resistance RDS(ON) = 4.5m (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXI

MOSTRAR MÁS

Otros transistores... TK6A65W, TK6A80E, TK6P60W, TK6P65W, TK6Q60W, TK6Q65W, TK70J04K3Z, TK72A08N1, AON7506, TK72E08N1, TK72E12N1, TK7A60W, TK7A60W5, TK7A65W, TK7A90E, TK7J90E, TK7P60W