TK72A12N1 - параметры транзистора MOSFET, его аналоги, datasheet

TK72A12N1 Datasheet (PDF)

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TK72A12N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK72A12N1TK72A12N1TK72A12N1TK72A12N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.7 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 120 V)(3) Enha

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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK72A12N1ITK72A12N1FEATURESLow drain-source on-resistance:RDS(ON) = 4.5m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI

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TK72A08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK72A08N1TK72A08N1TK72A08N1TK72A08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.7 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3) Enhan

9.2. Size:253K inchange semiconductor
tk72a08n1.pdf pdf_icon

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK72A08N1ITK72A08N1FEATURESLow drain-source on-resistance:RDS(ON) = 4.5m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .