All MOSFET. TK72A12N1 Datasheet

 

TK72A12N1 MOSFET. Datasheet pdf. Equivalent

Type Designator: TK72A12N1

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 120 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 72 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 130 nC

Rise Time (tr): 33 nS

Drain-Source Capacitance (Cd): 1200 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0045 Ohm

Package: TO-220SIS

TK72A12N1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK72A12N1 Datasheet (PDF)

1.1. tk72a12n1.pdf Size:233K _upd-mosfet

TK72A12N1
TK72A12N1

TK72A12N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK72A12N1 TK72A12N1 TK72A12N1 TK72A12N1 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) (3) Enha

5.1. tk72a08n1.pdf Size:234K _upd-mosfet

TK72A12N1
TK72A12N1

TK72A08N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK72A08N1 TK72A08N1 TK72A08N1 TK72A08N1 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (3) Enhan

Datasheet: TK6A65W , TK6A80E , TK6P60W , TK6P65W , TK6Q60W , TK6Q65W , TK70J04K3Z , TK72A08N1 , J112 , TK72E08N1 , TK72E12N1 , TK7A60W , TK7A60W5 , TK7A65W , TK7A90E , TK7J90E , TK7P60W .

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