TK72A12N1 MOSFET Datasheet: N-Ch, 120V, 72A. Full specification with pinout and replacement list

TK72A12N1 Specs and Replacement

Type Designator: TK72A12N1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 72 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO-220SIS

TK72A12N1 substitution

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TK72A12N1 datasheet

..1. Size:233K toshiba
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TK72A12N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK72A12N1 TK72A12N1 TK72A12N1 TK72A12N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 3.7 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 120 V) (3) Enha... See More ⇒

..2. Size:251K inchange semiconductor
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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK72A12N1 ITK72A12N1 FEATURES Low drain-source on-resistance RDS(ON) = 4.5m (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXI... See More ⇒

9.1. Size:234K toshiba
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TK72A08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK72A08N1 TK72A08N1 TK72A08N1 TK72A08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 3.7 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3) Enhan... See More ⇒

9.2. Size:253K inchange semiconductor
tk72a08n1.pdf pdf_icon

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK72A08N1 ITK72A08N1 FEATURES Low drain-source on-resistance RDS(ON) = 4.5m (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXI... See More ⇒

Detailed specifications: TK6A65W, TK6A80E, TK6P60W, TK6P65W, TK6Q60W, TK6Q65W, TK70J04K3Z, TK72A08N1, AON7506, TK72E08N1, TK72E12N1, TK7A60W, TK7A60W5, TK7A65W, TK7A90E, TK7J90E, TK7P60W