TK72E12N1 Todos los transistores

 

TK72E12N1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK72E12N1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 255 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 72 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 33 nS

Cossⓘ - Capacitancia de salida: 1200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0044 Ohm

Encapsulados: TO-220

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TK72E12N1 datasheet

 ..1. Size:246K  toshiba
 tk72e12n1.pdf pdf_icon

TK72E12N1

TK72E12N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK72E12N1 TK72E12N1 TK72E12N1 TK72E12N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 3.6 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 120 V) (3) Enha

 ..2. Size:206K  inchange semiconductor
 tk72e12n1.pdf pdf_icon

TK72E12N1

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK72E12N1 FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMUM

 0.1. Size:254K  inchange semiconductor
 itk72e12n1.pdf pdf_icon

TK72E12N1

isc N-Channel MOSFET Transistor ITK72E12N1 FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 9.1. Size:246K  toshiba
 tk72e08n1.pdf pdf_icon

TK72E12N1

TK72E08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK72E08N1 TK72E08N1 TK72E08N1 TK72E08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 3.6 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3) Enhan

MOSTRAR MÁS

Otros transistores... TK6P60W , TK6P65W , TK6Q60W , TK6Q65W , TK70J04K3Z , TK72A08N1 , TK72A12N1 , TK72E08N1 , IRFP450 , TK7A60W , TK7A60W5 , TK7A65W , TK7A90E , TK7J90E , TK7P60W , TK7P60W5 , TK7P65W .

History: IRF8306M | 2SK1695 | APTC80H29SCTG

 

 

 


History: IRF8306M | 2SK1695 | APTC80H29SCTG

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