TK72E12N1 MOSFET. Datasheet pdf. Equivalent
Type Designator: TK72E12N1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 255 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 72 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 130 nC
trⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 1200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
Package: TO-220
TK72E12N1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK72E12N1 Datasheet (PDF)
tk72e12n1.pdf
TK72E12N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK72E12N1TK72E12N1TK72E12N1TK72E12N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.6 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 120 V)(3) Enha
tk72e12n1.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK72E12N1FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM
itk72e12n1.pdf
isc N-Channel MOSFET Transistor ITK72E12N1FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
tk72e08n1.pdf
TK72E08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK72E08N1TK72E08N1TK72E08N1TK72E08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.6 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3) Enhan
tk72e08n1.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK72E08N1ITK72E08N1FEATURESLow drain-source on-resistance:RDS(on) 4.3m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIM
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