TK72E12N1 - описание и поиск аналогов

TK72E12N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK72E12N1 TK72E12N1 TK72E12N1 TK72E12N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 3.6 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 120 V) (3) Enha

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK72E12N1 FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMUM

isc N-Channel MOSFET Transistor ITK72E12N1 FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

TK72E08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK72E08N1 TK72E08N1 TK72E08N1 TK72E08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 3.6 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3) Enhan

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK72E08N1 ITK72E08N1 FEATURES Low drain-source on-resistance RDS(on) 4.3m . (VGS = 10 V) Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIM