TK7P60W MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK7P60W
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 13 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de TK7P60W MOSFET
TK7P60W datasheet
tk7p60w.pdf
TK7P60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK7P60W TK7P60W TK7P60W TK7P60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.5 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancem
tk7p60w5.pdf
TK7P60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK7P60W5 TK7P60W5 TK7P60W5 TK7P60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 75 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.54 (typ.) by used to Super
tk7p65w.pdf
TK7P65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK7P65W TK7P65W TK7P65W TK7P65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.66 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement
Otros transistores... TK72A12N1 , TK72E08N1 , TK72E12N1 , TK7A60W , TK7A60W5 , TK7A65W , TK7A90E , TK7J90E , IRF1407 , TK7P60W5 , TK7P65W , TK7Q60W , TK7Q65W , TK7S10N1Z , TK80A04K3L , TK8A60W , TK8A60W5 .
Liste
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