TK7P60W Datasheet and Replacement
Type Designator: TK7P60W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 13 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: DPAK
TK7P60W substitution
TK7P60W Datasheet (PDF)
tk7p60w.pdf

TK7P60WMOSFETs Silicon N-Channel MOS (DTMOS)TK7P60WTK7P60WTK7P60WTK7P60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.5 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancem
tk7p60w5.pdf

TK7P60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK7P60W5TK7P60W5TK7P60W5TK7P60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 75 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.54 (typ.) by used to Super
tk7p65w.pdf

TK7P65WMOSFETs Silicon N-Channel MOS (DTMOS)TK7P65WTK7P65WTK7P65WTK7P65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.66 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement
Datasheet: TK72A12N1 , TK72E08N1 , TK72E12N1 , TK7A60W , TK7A60W5 , TK7A65W , TK7A90E , TK7J90E , P0903BDG , TK7P60W5 , TK7P65W , TK7Q60W , TK7Q65W , TK7S10N1Z , TK80A04K3L , TK8A60W , TK8A60W5 .
History: FDMS86263P
Keywords - TK7P60W MOSFET datasheet
TK7P60W cross reference
TK7P60W equivalent finder
TK7P60W lookup
TK7P60W substitution
TK7P60W replacement
History: FDMS86263P



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