TK9A65W Todos los transistores

 

TK9A65W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK9A65W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 30 W
   Voltaje máximo drenador - fuente |Vds|: 650 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 9.3 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
   Carga de la puerta (Qg): 20 nC
   Tiempo de subida (tr): 16 nS
   Conductancia de drenaje-sustrato (Cd): 20 pF
   Resistencia entre drenaje y fuente RDS(on): 0.5 Ohm
   Paquete / Cubierta: TO-220SIS

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TK9A65W Datasheet (PDF)

 ..1. Size:374K  toshiba
tk9a65w.pdf

TK9A65W TK9A65W

TK9A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK9A65WTK9A65WTK9A65WTK9A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.43 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement

 ..2. Size:253K  inchange semiconductor
tk9a65w.pdf

TK9A65W TK9A65W

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK9A65WITK9A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.43 (typ.)Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.35mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(

 9.1. Size:190K  toshiba
tk9a60d.pdf

TK9A65W TK9A65W

TK9A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK9A60D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.67 (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth =

 9.2. Size:253K  inchange semiconductor
tk9a60d.pdf

TK9A65W TK9A65W

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK9A60DITK9A60DFEATURESLow drain-source on-resistance:RDS(ON) = 0.67 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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