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TK9A65W MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK9A65W

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 9.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 20 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm

Encapsulados: TO-220SIS

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TK9A65W datasheet

 ..1. Size:374K  toshiba
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TK9A65W

TK9A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK9A65W TK9A65W TK9A65W TK9A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.43 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement

 ..2. Size:253K  inchange semiconductor
tk9a65w.pdf pdf_icon

TK9A65W

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK9A65W ITK9A65W FEATURES Low drain-source on-resistance RDS(ON) = 0.43 (typ.) Enhancement mode Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.35mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(

 9.1. Size:190K  toshiba
tk9a60d.pdf pdf_icon

TK9A65W

TK9A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK9A60D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.67 (typ.) High forward transfer admittance Yfs = 4.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement mode Vth =

 9.2. Size:253K  inchange semiconductor
tk9a60d.pdf pdf_icon

TK9A65W

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK9A60D ITK9A60D FEATURES Low drain-source on-resistance RDS(ON) = 0.67 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T

Otros transistores... TK8A60W5 , TK8A65W , TK8P60W , TK8P60W5 , TK8P65W , TK8Q60W , TK8Q65W , TK90S06N1L , 75N75 , TK9A90E , TK9J90E , TK9P65W , TK9Q65W , TMA7N90 , TMAN10N80 , TMAN11N90AZ , TMAN11N90Z .

 

 

 


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