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TK9A65W Specs and Replacement

Type Designator: TK9A65W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO-220SIS

TK9A65W substitution

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TK9A65W datasheet

 ..1. Size:374K  toshiba
tk9a65w.pdf pdf_icon

TK9A65W

TK9A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK9A65W TK9A65W TK9A65W TK9A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.43 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement... See More ⇒

 ..2. Size:253K  inchange semiconductor
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TK9A65W

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK9A65W ITK9A65W FEATURES Low drain-source on-resistance RDS(ON) = 0.43 (typ.) Enhancement mode Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.35mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(... See More ⇒

 9.1. Size:190K  toshiba
tk9a60d.pdf pdf_icon

TK9A65W

TK9A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK9A60D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.67 (typ.) High forward transfer admittance Yfs = 4.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement mode Vth = ... See More ⇒

 9.2. Size:253K  inchange semiconductor
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TK9A65W

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK9A60D ITK9A60D FEATURES Low drain-source on-resistance RDS(ON) = 0.67 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

Detailed specifications: TK8A60W5, TK8A65W, TK8P60W, TK8P60W5, TK8P65W, TK8Q60W, TK8Q65W, TK90S06N1L, 75N75, TK9A90E, TK9J90E, TK9P65W, TK9Q65W, TMA7N90, TMAN10N80, TMAN11N90AZ, TMAN11N90Z

Keywords - TK9A65W MOSFET specs

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