TK9A65W - аналоги, параметры транзистора - Справочник транзисторов

TK9A65W даташит

..1. Size:374K toshiba
tk9a65w.pdf pdf_icon

TK9A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK9A65W TK9A65W TK9A65W TK9A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.43 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement

..2. Size:253K inchange semiconductor
tk9a65w.pdf pdf_icon

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK9A65W ITK9A65W FEATURES Low drain-source on-resistance RDS(ON) = 0.43 (typ.) Enhancement mode Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.35mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(

9.1. Size:190K toshiba
tk9a60d.pdf pdf_icon

TK9A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK9A60D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.67 (typ.) High forward transfer admittance Yfs = 4.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement mode Vth =

9.2. Size:253K inchange semiconductor
tk9a60d.pdf pdf_icon

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK9A60D ITK9A60D FEATURES Low drain-source on-resistance RDS(ON) = 0.67 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T

Другие MOSFET... TK8A60W5 , TK8A65W , TK8P60W , TK8P60W5 , TK8P65W , TK8Q60W , TK8Q65W , TK90S06N1L , 75N75 , TK9A90E , TK9J90E , TK9P65W , TK9Q65W , TMA7N90 , TMAN10N80 , TMAN11N90AZ , TMAN11N90Z .