IRF1405ZL-7PPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF1405ZL-7PPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 230 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 140 nS
Cossⓘ - Capacitancia de salida: 1310 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0049 Ohm
Paquete / Cubierta: TO-263CA-7
Búsqueda de reemplazo de IRF1405ZL-7PPBF MOSFET
IRF1405ZL-7PPBF Datasheet (PDF)
irf1405zl-7ppbf irf1405zs-7ppbf.pdf

PD - 97206BIRF1405ZS-7PPbFIRF1405ZL-7PPbFHEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120AS (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes the latestpro
irf1405zlpbf irf1405zpbf irf1405zspbf.pdf

PD - 97018AIRF1405ZPbFIRF1405ZSPbFIRF1405ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.9ml Lead-FreeGID = 75ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ex
irf1405zpbf irf1405zspbf irf1405zlpbf.pdf

PD - 97018AIRF1405ZPbFIRF1405ZSPbFIRF1405ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.9ml Lead-FreeGID = 75ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ex
auirf1405zs auirf1405zl.pdf

AUTOMOTIVE GRADE AUIRF1405ZS AUIRF1405ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max. 4.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 150A Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed
Otros transistores... TMU7N65AZ , TMU7N65Z , TMU830 , TMU830AZ , TMU830Z , TMU8N25Z , TMU8N50Z , TMU8N60AZ , RU6888R , IRF1405ZLPBF , IRF1405ZPBF , IRF1405ZS-7PPBF , IRF1405ZSPBF , IRF1407PBF , IRF140SMD , FMP03N60E , FMP05N50E .
History: MP10N60EIF | DMN15H310SE | IRFSZ35 | SSM6P16FU | SPP08P06PH | P3606BEA | P5515BD
History: MP10N60EIF | DMN15H310SE | IRFSZ35 | SSM6P16FU | SPP08P06PH | P3606BEA | P5515BD



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