All MOSFET. IRF1405ZL-7PPBF Datasheet

 

IRF1405ZL-7PPBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF1405ZL-7PPBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 230 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 150 nC

Rise Time (tr): 140 nS

Drain-Source Capacitance (Cd): 1310 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0049 Ohm

Package: TO-263CA-7

IRF1405ZL-7PPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF1405ZL-7PPBF Datasheet (PDF)

1.1. irf1405zl-7ppbf irf1405zs-7ppbf.pdf Size:319K _upd-mosfet

IRF1405ZL-7PPBF
IRF1405ZL-7PPBF

PD - 97206B IRF1405ZS-7PPbF IRF1405ZL-7PPbF HEXFET® Power MOSFET Features l Advanced Process Technology D VDSS = 55V l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching RDS(on) = 4.9mΩ‰ G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free S ID = 120A S (Pin 2, 3, 5, 6, 7) G (Pin 1) Description This HEXFET® Power MOSFET utilizes the latest pro

1.2. irf1405zlpbf irf1405zpbf irf1405zspbf.pdf Size:396K _upd-mosfet

IRF1405ZL-7PPBF
IRF1405ZL-7PPBF

PD - 97018A IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF Features HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175°C Operating Temperature VDSS = 55V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.9mΩ l Lead-Free G ID = 75A Description S This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve ex

 2.1. irf1405z.pdf Size:179K _international_rectifier

IRF1405ZL-7PPBF
IRF1405ZL-7PPBF

PD - 94645 AUTOMOTIVE MOSFET IRF1405Z HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 175C Operating Temperature RDS(on) = 4.9m? l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techni

Datasheet: TMU7N65AZ , TMU7N65Z , TMU830 , TMU830AZ , TMU830Z , TMU8N25Z , TMU8N50Z , TMU8N60AZ , TPC8107 , IRF1405ZLPBF , IRF1405ZPBF , IRF1405ZS-7PPBF , IRF1405ZSPBF , IRF1407PBF , IRF140SMD , FMP03N60E , FMP05N50E .

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