FMP20N60S1 Todos los transistores

 ..1. Size:410K  fuji
 fmp20n60s1.pdf

http //www.fujielectric.com/products/semiconductor/ FMP20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance 4.5 0.2 TO-220 10+0.5 0 1.3 0.2 Low switching loss easy to use (more controllabe switching dV/dt by R ) g Drain(D) Applications UPS 1.2 0.2 Server PRE-S

 ..2. Size:206K  inchange semiconductor
 fmp20n60s1.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FMP20N60S1 FEATURES With TO-220 packaging Low switching loss Low on-state resistance Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications DC-DC converters Uninterruptible power supply ABSOLUTE MAXIMUM RA

 8.1. Size:490K  fuji
 fmp20n50es.pdf

FMP20N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V

 8.2. Size:360K  fuji
 fmp20n50e.pdf

FMP20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)