FMP20N60S1
MOSFET. Datasheet pdf. Equivalent
Type Designator: FMP20N60S1
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 48
nC
trⓘ - Rise Time: 40
nS
Cossⓘ -
Output Capacitance: 3120
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19
Ohm
Package:
TO-220
FMP20N60S1
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FMP20N60S1
Datasheet (PDF)
..1. Size:410K fuji
fmp20n60s1.pdf
http://www.fujielectric.com/products/semiconductor/FMP20N60S1 FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistance 4.50.2TO-220 10+0.5 01.30.2Low switching losseasy to use (more controllabe switching dV/dt by R )gDrain(D)ApplicationsUPS1.2 0.2ServerPRE-S
..2. Size:206K inchange semiconductor
fmp20n60s1.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor FMP20N60S1FEATURESWith TO-220 packagingLow switching lossLow on-state resistanceEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC-DC convertersUninterruptible power supplyABSOLUTE MAXIMUM RA
8.1. Size:490K fuji
fmp20n50es.pdf
FMP20N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V
8.2. Size:360K fuji
fmp20n50e.pdf
FMP20N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.